Reactions Of High-K Gate Dielectrics: Studies In Hafnium, Zirconium, Yttrium, And Lanthanum-Based Dielectrics And In-Situ Infrared Results For Hafnium Dioxide Atomic Layer Deposition
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Reactions Of High-K Gate Dielectrics: Studies In Hafnium, Zirconium, Yttrium, And Lanthanum-Based Dielectrics And In-Situ Infrared Results For Hafnium Dioxide Atomic Layer Deposition